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  r07ds1187ej0200 rev.2.00 page 1 of 7 aug 07, 2014 preliminary datasheet bcr8fm-14lb 700v ? 8a - triac medium power use features ? i t (rms) : 8 a ? v drm : 800 v (tj=125 c) ? tj: 150 c ? i fgti , i rgti , i rgt iii :30 ma(20ma) note5 ? insulated type ? planar passivation type ? viso: 2000v outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal renesas package code: prss0003ag-a (package name: to-220fp) 1 2 3 applications switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. maximum ratings parameter symbol voltage class unit conditions 14 repetitive peak off-state voltage note1 v drm 800 v tj=125 c 700 v tj=150 c non-repetitive peak off-state voltage note1 v dsm 840 v notes: 1. gate open. r07ds1187ej0200 rev.2.00 a ug 07, 2014
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 2 of 7 aug 07, 2014 parameter symbol ratings unit conditions rms on-state current i t (rms) 8 a commercial frequency, sine full wave 360 conduction, tc = 114 c (#bb0, see ordering info.) 107 c (#fa0, see ordering info.) surge on-state current i tsm 80 a 60 hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 26 a 2 s value corresponding to 1 cycle of half wave 60 hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 c storage temperature tstg ?40 to +150 c mass ? 1.9 g typical value isolation voltage note6 v iso 2000 v ta=25 c, ac 1 minute, t 1 ? t 2 ? g terminal to case electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 150 c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25 c, i tm = 12a, instantaneous measurement gate trigger voltage note2 v fgt ? ? 1.5 v tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? v rgt ? ? 1.5 v ?? v rgt ?? ? ? 1.5 v gate trigger curent note2 i fgt ? ? 30 note5 ma tj = 25 c, v d = 6 v, r l = 6 , r g = 330 ? i rgt ? ? 30 note5 ma ?? i rgt ?? ? ? 30 note5 ma gate non-trigger voltage v gd 0.2 ? ? v tj = 125 c, v d = 1/2 v drm 0.1 ? ? tj = 150 c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 3.6 c/w junction to case note3 #bb0 (see ordering info.) ? ? 4.3 c/w junction to case note3 #fa0 (see ordering info.) critical-rate of rise of off-state commutation voltage note4 (dv/dt)c 10 ? ? v/ s tj = 125 c 1 ? ? tj = 150 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. the contact themal resistance r th (c-f) in case of greasing is 0.5 c /w. 4. test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. high sensitivity (i gt 20ma) is also available.(i gt item:1) 6. make sure that your finished product containing this device meets your safe isolation requirements. for safety, it's advisable that heatsink is electrically floating. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 c/150 c 2.rate of rise of off- state commutating voltage (dv/dt)c =-4 a/ms 3.peak off-state voltage v d = 400 v s upply v o l tage ti me ti me ti me m a i n cu rrent m a i n v o l tage (d i/ dt)c v d (d v/ dt)c
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 3 of 7 aug 07, 2014 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4.0 0.5 1.5 2.5 3.5 1.0 2.0 3.0 10 2 10 1 10 0 2 3 5 7 5 7 2 3 5 7 10 0 10 1 10 2 37 25 37 25 100 60 40 0 10 20 30 50 70 90 80 10 3 7 5 3 2 7 5 3 2 10 2 10 1 23 5710 2 10 1 23 5710 3 23 5710 4 7 5 7 5 7 5 3 2 3 2 3 2 10 1 10 0 10 ?1 ?60 ?40?20 0 20 40 60 80 100 120 160 140 ?60 ?40?20 0 20 40 60 80 100 120 160 140 10 3 7 5 3 2 7 5 3 2 10 2 10 1 tj = 25c tj = 150c p g(av) = 0.5w v gm = 10v p gm = 5w i gm = 2a v gt = 1.5v i rgt i , i rgt iii i fgt i v gd = 0.1v typical example typical example i rgt iii i fgt i , i rgt i 10 2 10 3 10 4 10 ? 1 10 0 10 1 10 2 0 1 3 4 5 2 #fa0 #bb0 #fa0 #bb0
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 4 of 7 aug 07, 2014 maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (c/w) conduction time (cycles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature 6 4 2 8 10 14 12 16 0246 16 10 81214 10 3 10 ?1 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 23 57 23 57 23 57 23 57 10 4 10 2 10 1 10 5 10 3 024681012 16 14 0 20 40 80 60 100 120 140 160 024681012 16 14 0 20 40 80 60 100 120 140 160 0 20 40 80 60 100 120 140 160 0 0.5 1.0 1.5 3.0 2.5 2.0 ?60 ?40?20 0 20 40 60 80 100 120 160 140 10 6 10 2 7 5 3 2 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 no fins 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads natural convection no fins curves apply regardless of conduction angle resistive, inductive loads all fins are black painted aluminum and greased 100 100 t2.3 60 60 t2.3 curves apply regardless of conduction angle resistive, inductive loads natural convection typical example #bb0 #fa0 #bb0 #fa0
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 5 of 7 aug 07, 2014 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=125c) rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage (tj=150c) breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 ?40 0 40 80 120 160 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 ?60 ?20 20 60 100 160 140 ?40 0 40 80 120 23 5710 2 10 1 23 5710 3 23 5710 4 0 20 40 80 60 100 120 160 140 0 20 40 80 60 100 120 140 160 ?60 ?40?20 0 20 40 60 80 100 120 160 140 23 5710 2 10 1 23 5710 3 23 5710 4 0 20 40 80 60 100 120 160 140 2 3 5 7 2 3 5 7 7 10 1 10 0 10 0 10 1 10 2 37 25 37 25 typical example typical example tj = 150c typical example distribution t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? typical example typical example tj = 125c iii quadrant i quadrant main voltage main current i t (di/dt)c v d time time (dv/dt)c typical example tj = 125c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum characteristics value iii quadrant i quadrant
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 6 of 7 aug 07, 2014 c 1 = 0.1 to 0.47 f r 1 = 47 to 100 c 0 = 0.1 f r 0 = 100 gate trigger characteristics test circuits recommended circuit values around the triac test procedure i test procedure iii test procedure ii commutation characteristics (tj=150c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width ( s) gate trigger current vs. gate current pulse width 2 3 5 7 2 3 5 7 7 10 1 10 0 10 0 10 1 10 2 37 25 37 25 10 3 7 5 3 2 7 5 3 2 10 2 10 1 10 0 10 1 10 2 37 25 37 25 330 330 330 c 1 c 0 r 0 r 1 6 6 6v 6v a v a v 6 6v a v main voltage main current i t (di/dt)c v d time time (dv/dt)c iii quadrant i quadrant minimum characteristics value typical example tj = 150c i t = 4a = 500 s v d = 200v f = 3hz typical example i fgt i i rgt i i rgt iii load
bcr8fm-14lb preliminary r07ds1187ej0200 rev.2.00 page 7 of 7 aug 07, 2014 package dimensions 5.08 0.20 3.18 0.20 6.68 0.20 ?? 3.18 0.10 0.80 0.20 1.28 0.30 2.76 0.20 4.7 0.2 0.50 2.54 0.20 max 1.47 3.3 0.2 15.87 0.20 12.98 0.30 10.16 0.20 unit: mm ? ? ordering information orderable part number packing quantity remark quality grade note9 bcr8fm-14lb#bb0 tube note7 50 pcs. straight type general industrial & bcr8fm-14lb-1#bb0 tube note7 50 pcs. straight type, i gt item:1 general consumer use bcr8fm-14lb- ?? #bb0 tube note7 50 pcs. ?? :lead forming type bcr8fm-14lb1 ?? #bb0 tube note7 50 pcs. ?? :lead forming type, i gt item:1 bcr8fm-14lb#fa0 tube note7 50 pcs. straight type special consumer use note8 bcr8fm-14lb-1#fa0 tube note7 50 pcs. straight type, i gt item:1 bcr8fm-14lb- ?? #fa0 tube note7 50 pcs. ?? :lead forming type bcr8fm-14lb1 ?? #fa0 tube note7 50 pcs. ?? :lead forming type, i gt item:1 notes: 7. please confirm the specification about t he shipping in detail. 8. ?special consumer use? grade product is not tested for the ?temperature humidity bias? reliability in the condition of rated v drm . please be sure to implement qualificati on tests and judge whether the product meets your criteria. if necessary, please apply moisture-p roof measures according to user?s conditions. 9. for further details about the classification in the standard quality grade, please refer to the application note.
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2801 scott boulevard santa clara, ca 95050-2549, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-6503-0, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. room 1709, quantum plaza, no.27 zhichunlu haidian district, beijing 100191, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao road, putuo district, shanghai, p. r. china 200333 tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2265-6688, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei 10543, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre, singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-ku, seoul, 135-920, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2014 renesas electronics corporation. all rights reserved. colophon 4.0


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